bav70 www.vishay.com vishay semiconductors rev. 2.2, 13-feb-18 1 document number: 85546 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal switching diode, dual design support tools click logo to get started mechanical data case: sot-23 weight: approx. 8.8 mg packaging codes / options: 18/10k per 13" reel (8 mm tape), 10k/box 08/3k per 7" reel (8 mm tape), 15k/box features ? silicon epitaxial planar diode ? fast switching dual diode with common cathode ? aec-q101 qualified available ? base p/n-e3 - rohs-compliant, commercial grade ? base p/n-he3 - rohs-compliant, aec-q101 qualified ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 note (1) device on fiberglass substrate note (1) device on fiberglass substrate 18108 12 3 available model s parts table part ordering code circuit configuration type marking remarks bav70 BAV70-E3-08 or bav70-e3-18 common cathode jj tape and reel bav70-he3-08 or bav70-he3-18 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit peak reverse voltage v rrm 70 v reverse voltage v r 70 v forward current (continuous) i f 250 ma non repetitive peak forward current t p = 1 s i fsm 2a t p = 1 ms i fsm 1a t p = 1 s i fsm 0.5 a power dissi pation (1) p tot 350 mw thermal characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit thermal resistance junction to ambient air (1) r thja 430 k/w junction temperature t j 150 c storage temperature range t stg -65 to +150 c operating temperature range t op -55 to +150 c
bav70 www.vishay.com vishay semiconductors rev. 2.2, 13-feb-18 2 document number: 85546 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characterisics (t amb = 25 c, unless otherwise specified) fig. 1 - forward current vs. forward voltage fig. 2 - peak forward current/ fm = f (t p ) electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 1 ma v f 0.715 v i f = 10 ma v f 0.855 v i f = 50 ma v f 1v i f = 150 ma v f 1.25 v reverse current v r = 70 v i r 2500 na v r = 70 v, t j = 150 c i r 50 a v r = 25 v, t j = 150 c i r 30 a diode capacitance v r = 0 v, f = 1 mhz c d 1.5 pf reverse recovery time i f = 10 ma to i r = 1 ma, v r = 6 v, r l = 100 ? t rr 6ns i - forward current (ma) 0.01 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v f - forward voltage (v) 14356 f t j = 100 c 25 c 22290 10 2 10 1 10 -1 10 -2 10 -5 10 -6 10 -3 10 -4 10 -1 10 -2 10 -0 10 0 / fm t s d = 0.005 0.01 0.02 0.05 0.1 0.2 t p t p d = t t
bav70 www.vishay.com vishay semiconductors rev. 2.2, 13-feb-18 3 document number: 85546 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): sot-23 foot print recommendation: rev. 8 - date: 23. s ept.2009 17418 document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.95 (0.037) 0.95 (0.037) 2 (0.079) 0.7 (0.028) 0.9 (0.035) 0 to 8 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
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